Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate
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چکیده
منابع مشابه
Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
Highly uniform, smooth, and conformal coatings of higher nitrides of hafnium and zirconium were produced by atomic layer deposition from homoleptic tetrakis(dialkylamido)metal(IV) complexes and ammonia at low substrate temperatures (150-250 °C). The precursor vapors were alternately pulsed into a heated reactor, yielding 1.15-1.20 Å of metal nitride film for every cycle. Successful depositions ...
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In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2004
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.1764819